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UAH unnu'-Oi7F IVIII_~I IUUIVC. I / 6.11 OPTOELECTRONICS, DETECTORS, ISOLATORS, EMITTERS SPECIFICATION MIL-S-19500 DESCRIPTION Photodetectors, opto-isoiators, Emitters = A.. KTZ ... 7t Failures/106 Hours H D I U t: AOA CiL irA _ 1 Daw I GMIUIU now -QuaIrtv Factor -vj upioeiecironic type v Photodetectors Photo-Transistor .0055 Photo-Diode .0040 Ontrt.leolatrtrc V^tv I9V1HIVI V Photodiode Output, Single Device .0025 Phototransistor Output. Single Device .013 Photodarlington Output, Single Device .013 Light Sensitive Resistor, Single Device .0064 Photodiode OutDUt. Dual Device .0033 phototransistor Output, Dual Device .017 PhntrtHarlinntnn Outfit it Dual Devire .017 I inht QancitK/o Roeitr>r Hi ml HavirA " ,0086 Emitters infrared Light Emitting Diode (iRLD) An J n .UU IO Light Emitting Diode (LED) .00023 i emperature t-actor - itj TjCC) nT Tj (C) nT 25 1.0 75 3.8 Oft o an W V 35 1.4 85 4.8 40 1.6 90 5.3 45 1.8 95 5.9 r n O U r\ 4 . 1 -4 Aft 1 VV e c u.u 55 2.4 105 7.3 60 2.7 110 8.0 65 3.0 115 8.8 /u A J JtT -exp f- 2790 ( 1 I T . 1-TO ona 1 1 i exp f- 2790 "") ) TJ " Junction Temperature (C) N.. ^ I >4M vjfuanijr IT _ "U JANTXV .70 JANTX 1.0 JAN 2.4 Lower 5.5 Dlortir 8.0 ICIOIIW 8.0 tnvironmeni 7lE GB 1.0 Gr r 2.0 m. n n W. V NS 5.0 N,, 12 A. 4.0 aif r* ft O.U Auc 6.0 A| ip V 1 8.0 A "HW 17 sF .50 Mp 9.0 M. L. 24 n ylKft i

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